Clampet Posted June 1, 2007 Report Posted June 1, 2007 Just wonderin' about this part.. "For their study, the researchers grew a 4µm-thick p-GaN epilayer via hydride vapor-phase epitaxy on a c-plane sapphire substrate (Mg was the p-type dopant (hole concentration = 2.5 x 10[18] cm[3]), onto which was first deposited a 65nm thick SiO2 layer using PECVD, then a Ti/Al/Ti layer (thicknesses 30-100-30nm) using e-beam evaporation. Photolithography and wet etching yielded 300µm-dia circular, insulated metal contact pads with 500µm pitch on the surface of the p-GaN epilayer. A suspension of GaN nanowires in isopropanol was then dispersed onto the substrate with the insulated metal contact pads; the nanowires were aligned dielectrophoretically by applying a 10 V peak to peak, 1 kHz sinusoidal voltage to one post."
keram Posted June 1, 2007 Report Posted June 1, 2007 Yup, it is basic process, with time and some modyfications you can make it even better. But you have to hurry, Muskie opener is only 48+ hrs away.
keram Posted June 1, 2007 Report Posted June 1, 2007 (edited) One more thing. To achieve desired performance faster I like to use ethanol instead of isopropanol. Any leftovers won't be wasted. Looks loke you were skipping school to much, it was in 4th grade Edited June 1, 2007 by keram
Fisherman Posted June 1, 2007 Report Posted June 1, 2007 Just wonderin' about this part.. "For their study, the researchers grew a 4µm-thick p-GaN epilayer via hydride vapor-phase epitaxy on a c-plane sapphire substrate (Mg was the p-type dopant (hole concentration = 2.5 x 10[18] cm[3]), onto which was first deposited a 65nm thick SiO2 layer using PECVD, then a Ti/Al/Ti layer (thicknesses 30-100-30nm) using e-beam evaporation. Photolithography and wet etching yielded 300µm-dia circular, insulated metal contact pads with 500µm pitch on the surface of the p-GaN epilayer. A suspension of GaN nanowires in isopropanol was then dispersed onto the substrate with the insulated metal contact pads; the nanowires were aligned dielectrophoretically by applying a 10 V peak to peak, 1 kHz sinusoidal voltage to one post." Ya, like to see those guys try to get a minnow on the hook, that ought to be interesting....
Terry Posted June 1, 2007 Report Posted June 1, 2007 so you could make a large scale led lighting system with very little voltage. very interesting is this theory or being done
Clampet Posted June 1, 2007 Author Report Posted June 1, 2007 Ya, like to see those guys try to get a minnow on the hook, that ought to be interesting.... That thar is the science which will set the hook!
Clampet Posted June 1, 2007 Author Report Posted June 1, 2007 so you could make a large scale led lighting system with very little voltage. very interestingis this theory or being done Well, after many hours spent behind the ceeement pond, Jethro and I with help from the U. of Maryland and Howard U., have devised a fabrication method that creates tiny ultraviolet light-emitting diodes from nanowires, and NIST says the technique is "well-suited" for scaling to commercial production.
Corey Posted June 1, 2007 Report Posted June 1, 2007 Is it bad that I pretty much understand that? With the exception of some of the chemicals names, I know what they are trying to do. Ethanol most likely will not work for that process like the isopropal will.
aplumma Posted June 1, 2007 Report Posted June 1, 2007 using chemicals and lazers to bond/etch is not a new process we have been doing this to computer chips for many years. Art
cantermore Posted June 1, 2007 Report Posted June 1, 2007 is that the process they are lighting up the CN Tower with? just to set up the gear needed to do all that production is about $ 4 billion fyi... R&D is a tad cheaper... someone has too much money here or access to a neat lab
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